IS42RM16160K-75BLI ISSI
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.3...3V DC
Anzahl je Verpackung: 348 Stücke
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.3...3V DC
Anzahl je Verpackung: 348 Stücke
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Technische Details IS42RM16160K-75BLI ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 133MHz; 7.5ns; TFBGA54, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory: 256Mb DRAM, Memory organisation: 4Mx16bitx4, Clock frequency: 133MHz, Access time: 7.5ns, Case: TFBGA54, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: in-tray; tube, Supply voltage: 2.3...3V DC, Anzahl je Verpackung: 348 Stücke.
Weitere Produktangebote IS42RM16160K-75BLI
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IS42RM16160K-75BLI | Hersteller : ISSI, Integrated Silicon Solution Inc | Description: IC SDRAM 256M 143MHZ 54BGA |
Produkt ist nicht verfügbar |
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IS42RM16160K-75BLI | Hersteller : ISSI | DRAM 256M, 2.5V, 143Mhz 16Mx16 Mobile SDR |
Produkt ist nicht verfügbar |
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IS42RM16160K-75BLI | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 133MHz; 7.5ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 133MHz Access time: 7.5ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.3...3V DC |
Produkt ist nicht verfügbar |