Technische Details IRLU3915PBF Infineon / IR
Description: MOSFET N-CH 55V 30A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: IPAK (TO-251AA), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V.
Weitere Produktangebote IRLU3915PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRLU3915PBF | Hersteller : ROCHESTER ELECTRONICS |
 Description: ROCHESTER ELECTRONICS - IRLU3915PBF - IRLU3915 12V-300V N-CHANNEL POWER MOSFETtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU3915PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 55V 61A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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IRLU3915PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 30A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: IPAK (TO-251AA) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V |
Produkt ist nicht verfügbar |