Technische Details IRLR2908 PBF
- MOSFET, N, 80V, 39A, D-PAK
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:80V
- Cont Current Id:39A
- On State Resistance:0.028ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:2.5V
- Case Style:DPAK
- Termination Type:SMD
- Alternate Case Style:D-PAK
- Junction to Case Thermal Resistance A:1.3`C/W
- Max Voltage Vds:80V
- Max Voltage Vgs th:2.5V
- On State resistance @ Vgs = 10V:0.028ohm
- Power Dissipation:120W
- Power Dissipation Pd:120W
- Pulse Current Idm:150A
- Transistor Case Style:D-PAK
Weitere Produktangebote IRLR2908 PBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRLR2908PBF | Hersteller : Infineon Technologies | Trans MOSFET N-CH Si 80V 39A 3-Pin(2+Tab) DPAK Tube |
Produkt ist nicht verfügbar |
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IRLR2908PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 80V 30A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRLR2908PBF | Hersteller : Infineon Technologies | MOSFET 80V 1 N-CH HEXFET PWR MOSFET 28mOhms |
Produkt ist nicht verfügbar |