Technische Details IRLMS5703TR IR
Description: MOSFET P-CH 30V 2.3A 6-TSOP, Packaging: Cut Tape (CT), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: Micro6™(SOT23-6), Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
Weitere Produktangebote IRLMS5703TR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRLMS5703TR | Hersteller : IR | 01+ |
auf Bestellung 9098 Stücke: Lieferzeit 21-28 Tag (e) |
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IRLMS5703TR | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 2.3A 6-TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: Micro6™(SOT23-6) Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
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