IRLIZ34GPBF Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 60V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.85 EUR |
50+ | 2.28 EUR |
100+ | 1.88 EUR |
500+ | 1.7 EUR |
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Technische Details IRLIZ34GPBF Vishay Siliconix
Description: MOSFET N-CH 60V 20A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 5V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V.
Weitere Produktangebote IRLIZ34GPBF nach Preis ab 1.83 EUR bis 2.94 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IRLIZ34GPBF | Hersteller : Vishay Semiconductors | MOSFET 60V N-CH HEXFET MOSFET |
auf Bestellung 1781 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLIZ34GPBF | Hersteller : Vishay | Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
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IRLIZ34GPBF | Hersteller : Vishay | Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
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IRLIZ34GPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 42W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±10V On-state resistance: 70mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRLIZ34GPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 42W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±10V On-state resistance: 70mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |