IRLH6224TR2PBF Infineon Technologies
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Technische Details IRLH6224TR2PBF Infineon Technologies
Description: MOSFET N CH 20V 28A PQFN 5X6 MM, Packaging: Cut Tape (CT), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 105A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 50µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Obsolete, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 10 V.
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IRLH6224TR2PBF | Hersteller : Infineon Technologies |
Description: MOSFET N CH 20V 28A PQFN 5X6 MM Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 10 V |
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