IRL8114PBF

IRL8114PBF Infineon Technologies


irl8114pbf.pdf?fileId=5546d462533600a4015356601e9b2583 Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 15 V
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details IRL8114PBF Infineon Technologies

Description: MOSFET N-CH 30V 90A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 2.25V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 15 V.

Weitere Produktangebote IRL8114PBF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRL8114PBF IRL8114PBF Hersteller : Infineon Technologies irl8114pbf-1732912.pdf MOSFET TRENCH <= 40V
Produkt ist nicht verfügbar