Technische Details IRL8113PBF Infineon
Description: MOSFET N-CH 30V 105A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 105A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 21A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 2.25V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V.
Weitere Produktangebote IRL8113PBF
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IRL8113PBF Produktcode: 72236 |
Hersteller : IR |
 Transistoren > MOSFET N-CHGehäuse: TO-220 Uds,V: 30 V Idd,A: 74 A Rds(on), Ohm: 6 mOhm Ciss, pF/Qg, nC: 2840/23 Bem.: Управління логічним рівнем JHGF: THT |
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IRL8113PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 105A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 21A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V |
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IRL8113PBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT 30V 105A 23nC 6mOhm Qg log lvl |
Produkt ist nicht verfügbar |