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IRL640STRRPBF Vishay Siliconix
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Description: MOSFET N-CH 200V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 2.78 EUR |
1600+ | 2.38 EUR |
2400+ | 2.24 EUR |
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Technische Details IRL640STRRPBF Vishay Siliconix
Description: MOSFET N-CH 200V 17A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V, Power Dissipation (Max): 3.1W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V.
Weitere Produktangebote IRL640STRRPBF nach Preis ab 1.97 EUR bis 4.59 EUR
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IRL640STRRPBF | Hersteller : Vishay Semiconductors |
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auf Bestellung 1610 Stücke: Lieferzeit 10-14 Tag (e) |
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IRL640STRRPBF | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 3980 Stücke: Lieferzeit 10-14 Tag (e) |
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IRL640STRRPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRL640STRRPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRL640STRRPBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 68A; 125W Case: D2PAK; TO263 Mounting: SMD Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 66nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 68A Drain-source voltage: 200V Drain current: 17A On-state resistance: 0.27Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRL640STRRPBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 68A; 125W Case: D2PAK; TO263 Mounting: SMD Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 66nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 68A Drain-source voltage: 200V Drain current: 17A On-state resistance: 0.27Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |