IRGP4790D-EPBF Infineon Technologies
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 650V 140A 455000mW 3-Pin(3+Tab) TO-247AD Tube
Trans IGBT Chip N-CH 650V 140A 455000mW 3-Pin(3+Tab) TO-247AD Tube
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Technische Details IRGP4790D-EPBF Infineon Technologies
Description: IGBT 650V 140A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 170 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: 50ns/200ns, Switching Energy: 2.5mJ (on), 2.2mJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 210 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 140 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 455 W.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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IRGP4790D-EPBF | Hersteller : Infineon Technologies |
Description: IGBT 650V 140A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 170 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 50ns/200ns Switching Energy: 2.5mJ (on), 2.2mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 210 nC Part Status: Obsolete Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 455 W |
Produkt ist nicht verfügbar |
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IRGP4790D-EPBF | Hersteller : Infineon / IR | IGBT Transistors 650V UltraFast IGBT TO-247 |
Produkt ist nicht verfügbar |