Technische Details IRGB6B60KDPBF
- IGBT, 600V, 13A, TO-220
- Transistor Type:IGBT
- Max Voltage Vce Sat:2V
- Collector-to-Emitter Breakdown Voltage:600V
- Case Style:TO-220AB
- Fall Time Tf:22ns
- Max Current Ic Continuous a:13A
- Max Fall Time:22ns
- Power Dissipation:90W
- Power Dissipation Pd:90W
- Pulsed Current Icm:26A
- Rise Time:17ns
- Termination Type:Through Hole
- Transistor Polarity:N Channel
- Voltage Vces:600V
Weitere Produktangebote IRGB6B60KDPBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IRGB6B60KDPBF | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 600V 18A 90000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
||
IRGB6B60KDPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB Case: TO220AB Mounting: THT Collector-emitter voltage: 600V Collector current: 13A Type of transistor: IGBT Power dissipation: 90W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
||
IRGB6B60KDPBF | Hersteller : Infineon Technologies |
Description: IGBT 600V 13A 90W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Supplier Device Package: TO-220AB IGBT Type: NPT Td (on/off) @ 25°C: 25ns/215ns Switching Energy: 110µJ (on), 135µJ (off) Test Condition: 400V, 5A, 100Ohm, 15V Gate Charge: 18.2 nC Part Status: Obsolete Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 26 A Power - Max: 90 W |
Produkt ist nicht verfügbar |
||
IRGB6B60KDPBF | Hersteller : Infineon / IR | IGBT Transistors 600V UltraFast 10-30kHz |
Produkt ist nicht verfügbar |
||
IRGB6B60KDPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB Case: TO220AB Mounting: THT Collector-emitter voltage: 600V Collector current: 13A Type of transistor: IGBT Power dissipation: 90W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |