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IRGB4715DPBF

IRGB4715DPBF Infineon Technologies

IRG%28B%2CS%294715DPbF.pdf Hersteller: Infineon Technologies
Description: IGBT 650V TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 200µJ (on), 90µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 100 W
auf Bestellung 389 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
247+2 EUR
Mindestbestellmenge: 247
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Technische Details IRGB4715DPBF Infineon Technologies

Description: IGBT 650V TO-220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 86 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A, Supplier Device Package: TO-220AB, Td (on/off) @ 25°C: 30ns/100ns, Switching Energy: 200µJ (on), 90µJ (off), Test Condition: 400V, 8A, 50Ohm, 15V, Gate Charge: 30 nC, Current - Collector (Ic) (Max): 21 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 100 W.

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IRGB4715DPBF IRGB4715DPBF Hersteller : International Rectifier IRSD-S-A0000217278-1.pdf?t.download=true&u=5oefqw Description: IGBT 650V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 200µJ (on), 90µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 100 W
auf Bestellung 599 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
247+2 EUR
Mindestbestellmenge: 247
IRGB4715DPBF IRGB4715DPBF Hersteller : Infineon / IR irgs4715dpbf-1227962.pdf IGBT Transistors 650V UltraFast IGBT TO-220
auf Bestellung 365 Stücke:
Lieferzeit 10-14 Tag (e)
IRGB4715DPBF IRGB4715DPBF Hersteller : Infineon Technologies 3631irgs4715dpbf.pdf Trans IGBT Chip N-CH 650V 21A 100000mW 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
IRGB4715DPBF IRGB4715DPBF Hersteller : Infineon Technologies IRG%28B%2CS%294715DPbF.pdf Description: IGBT 650V TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 200µJ (on), 90µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 100 W
Produkt ist nicht verfügbar