Technische Details IRG4PSC71UPBF
- IGBT, 600V, 85A, TO-274AA
- Transistor Type:IGBT
- Max Voltage Vce Sat:2V
- Collector-to-Emitter Breakdown Voltage:600V
- Case Style:Super-247
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Max Current Ic Continuous a:85A
- Max Fall Time:130ns
- No. of Transistors:1
- Power Dissipation:350W
- Power Dissipation Pd:350W
- Pulsed Current Icm:200A
- Rise Time:50ns
- Termination Type:Through Hole
- Transistor Polarity:N
- Voltage Vces:600V
Weitere Produktangebote IRG4PSC71UPBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRG4PSC71UPBF | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 600V 85A 350000mW 3-Pin(3+Tab) TO-274AA Tube |
Produkt ist nicht verfügbar |
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IRG4PSC71UPBF | Hersteller : Infineon Technologies |
Description: IGBT 600V 85A 350W SUPER247 Packaging: Bag Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Supplier Device Package: SUPER-247™ (TO-274AA) Td (on/off) @ 25°C: 34ns/56ns Switching Energy: 420µJ (on), 1.99mJ (off) Test Condition: 480V, 60A, 5Ohm, 15V Gate Charge: 340 nC Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 350 W |
Produkt ist nicht verfügbar |
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IRG4PSC71UPBF | Hersteller : Infineon / IR | IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT |
Produkt ist nicht verfügbar |