IRG4PH50S-EPBF Infineon Technologies
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Technische Details IRG4PH50S-EPBF Infineon Technologies
Description: IGBT 1200V 57A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: 32ns/845ns, Switching Energy: 1.8mJ (on), 19.6mJ (off), Test Condition: 960V, 33A, 5Ohm, 15V, Gate Charge: 167 nC, Current - Collector (Ic) (Max): 57 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 114 A, Power - Max: 200 W.
Weitere Produktangebote IRG4PH50S-EPBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRG4PH50S-EPBF | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 1200V 57A 200000mW 3-Pin(3+Tab) TO-247AD Tube |
Produkt ist nicht verfügbar |
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IRG4PH50S-EPBF | Hersteller : Infineon Technologies |
Description: IGBT 1200V 57A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 32ns/845ns Switching Energy: 1.8mJ (on), 19.6mJ (off) Test Condition: 960V, 33A, 5Ohm, 15V Gate Charge: 167 nC Current - Collector (Ic) (Max): 57 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 114 A Power - Max: 200 W |
Produkt ist nicht verfügbar |