IRG4PH20KDPBF Infineon Technologies
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Technische Details IRG4PH20KDPBF Infineon Technologies
Description: IGBT 1200V 11A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 51 ns, Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A, Supplier Device Package: TO-247AC, Td (on/off) @ 25°C: 50ns/100ns, Switching Energy: 620µJ (on), 300µJ (off), Test Condition: 800V, 5A, 50Ohm, 15V, Gate Charge: 28 nC, Current - Collector (Ic) (Max): 11 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 22 A, Power - Max: 60 W.
Weitere Produktangebote IRG4PH20KDPBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IRG4PH20KDPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 11A Power dissipation: 60W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRG4PH20KDPBF | Hersteller : Infineon Technologies |
Description: IGBT 1200V 11A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 51 ns Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 50ns/100ns Switching Energy: 620µJ (on), 300µJ (off) Test Condition: 800V, 5A, 50Ohm, 15V Gate Charge: 28 nC Current - Collector (Ic) (Max): 11 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 22 A Power - Max: 60 W |
Produkt ist nicht verfügbar |
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IRG4PH20KDPBF | Hersteller : Infineon / IR | IGBT Transistors 1200V UltraFast 4-20kHz |
Produkt ist nicht verfügbar |
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IRG4PH20KDPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 11A Power dissipation: 60W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |