IRG4P254SPBF Infineon Technologies
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Technische Details IRG4P254SPBF Infineon Technologies
Description: IGBT 250V 98A 200W TO247AC, Packaging: Bag, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 55A, Supplier Device Package: TO-247AC, Td (on/off) @ 25°C: 40ns/270ns, Switching Energy: 380µJ (on), 3.5mJ (off), Test Condition: 200V, 55A, 5Ohm, 15V, Gate Charge: 200 nC, Current - Collector (Ic) (Max): 98 A, Voltage - Collector Emitter Breakdown (Max): 250 V, Current - Collector Pulsed (Icm): 196 A, Power - Max: 200 W.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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IRG4P254SPBF | Hersteller : Infineon Technologies |
Description: IGBT 250V 98A 200W TO247AC Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 55A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 40ns/270ns Switching Energy: 380µJ (on), 3.5mJ (off) Test Condition: 200V, 55A, 5Ohm, 15V Gate Charge: 200 nC Current - Collector (Ic) (Max): 98 A Voltage - Collector Emitter Breakdown (Max): 250 V Current - Collector Pulsed (Icm): 196 A Power - Max: 200 W |
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IRG4P254SPBF | Hersteller : Infineon Technologies | IGBT Transistors 250V DC-1kHz |
Produkt ist nicht verfügbar |