Technische Details IRG4IBC30FD IR
Description: IGBT 600V 20.3A 45W TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 42 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A, Supplier Device Package: PG-TO220-FP, Td (on/off) @ 25°C: 42ns/230ns, Switching Energy: 630µJ (on), 1.39mJ (off), Test Condition: 480V, 17A, 23Ohm, 15V, Gate Charge: 51 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 20.3 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 45 W.
Weitere Produktangebote IRG4IBC30FD
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRG4IBC30FD | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 600V 20.3A 45000mW 3-Pin(3+Tab) TO-220AB Full-Pak |
Produkt ist nicht verfügbar |
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IRG4IBC30FD | Hersteller : Infineon Technologies |
Description: IGBT 600V 20.3A 45W TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Supplier Device Package: PG-TO220-FP Td (on/off) @ 25°C: 42ns/230ns Switching Energy: 630µJ (on), 1.39mJ (off) Test Condition: 480V, 17A, 23Ohm, 15V Gate Charge: 51 nC Part Status: Obsolete Current - Collector (Ic) (Max): 20.3 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 45 W |
Produkt ist nicht verfügbar |