IRFU5505PBF Infineon Technologies
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 120+ | 1.27 EUR |
| 141+ | 1.04 EUR |
| 164+ | 0.86 EUR |
| 200+ | 0.78 EUR |
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Technische Details IRFU5505PBF Infineon Technologies
Description: MOSFET P-CH 55V 18A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: IPAK (TO-251AA), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V.
Weitere Produktangebote IRFU5505PBF nach Preis ab 1.15 EUR bis 1.99 EUR
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IRFU5505PBF | Hersteller : Infineon / IR |
 MOSFET MOSFT P-Ch -55V -18A 110mOhm 21.3nC |
auf Bestellung 97 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFU5505PBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRFU5505PBF - IRFU5505 20V-250V P-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 751 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU5505PBF Produktcode: 67411 |
Verschiedene Bauteile > Verschiedene Bauteile 2 |
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IRFU5505PBF | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 55V 18A 3-Pin(3+Tab) IPAK Tube |
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IRFU5505PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; IPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -18A Power dissipation: 57W Case: IPAK Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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IRFU5505PBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 55V 18A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK (TO-251AA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V |
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IRFU5505PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; IPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -18A Power dissipation: 57W Case: IPAK Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |