IRFU024NPBFAKLA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Description: MOSFET N-CH
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
auf Bestellung 1346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.85 EUR |
12+ | 1.53 EUR |
100+ | 1.15 EUR |
500+ | 0.9 EUR |
1000+ | 0.82 EUR |
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Technische Details IRFU024NPBFAKLA1 Infineon Technologies
Description: MOSFET N-CH, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: IPAK (TO-251AA), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V.
Weitere Produktangebote IRFU024NPBFAKLA1 nach Preis ab 0.49 EUR bis 1.11 EUR
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IRFU024NPBFAKLA1 | Hersteller : Infineon Technologies | IRFU024NPBFAKLA1 |
auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU024NPBFAKLA1 | Hersteller : Infineon Technologies | IRFU024NPBFAKLA1 |
auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU024NPBFAKLA1 | Hersteller : Infineon Technologies | IRFU024NPBFAKLA1 |
auf Bestellung 2244 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU024NPBFAKLA1 | Hersteller : Infineon Technologies | IRFU024NPBFAKLA1 |
auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU024NPBFAKLA1 | Hersteller : Infineon Technologies | PLANAR 40<-<100V |
auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU024NPBFAKLA1 | Hersteller : Infineon Technologies | IRFU024NPBFAKLA1 |
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IRFU024NPBFAKLA1 | Hersteller : Infineon Technologies | MOSFETs N |
Produkt ist nicht verfügbar |