IRFSL7537PBF Infineon Technologies
auf Bestellung 826 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.89 EUR |
10+ | 4.1 EUR |
100+ | 3.04 EUR |
250+ | 3.03 EUR |
500+ | 2.69 EUR |
1000+ | 2.6 EUR |
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Technische Details IRFSL7537PBF Infineon Technologies
Description: MOSFET N-CH 60V 173A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 173A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 150µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V.
Weitere Produktangebote IRFSL7537PBF nach Preis ab 2.43 EUR bis 6.76 EUR
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IRFSL7537PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 173A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 150µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFSL7537PBF | Hersteller : Infineon Technologies | Trans MOSFET N-CH 60V 173A 3-Pin(3+Tab) TO-262 Tube |
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