IRFSL5615PBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 150V 33A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
auf Bestellung 984 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.84 EUR |
| 10+ | 3.14 EUR |
| 100+ | 2.18 EUR |
| 500+ | 1.76 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFSL5615PBF Infineon Technologies
Description: MOSFET N-CH 150V 33A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V, Power Dissipation (Max): 144W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V.
Weitere Produktangebote IRFSL5615PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IRFSL5615PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 150V 33A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
|
 |
IRFSL5615PBF | Hersteller : Infineon Technologies |
MOSFET Audio MOSFT 150V 33A 42mOhm 26nC |
Produkt ist nicht verfügbar |