IRFSL4410ZPBF

IRFSL4410ZPBF Infineon Technologies


Infineon_IRFS4410Z_DataSheet_v01_01_EN-3363451.pdf Hersteller: Infineon Technologies
MOSFET MOSFT 100V 97A 9mOhm 83nC
auf Bestellung 1389 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.61 EUR
10+ 3.87 EUR
25+ 3.66 EUR
100+ 3.15 EUR
250+ 2.96 EUR
500+ 2.8 EUR
1000+ 2.36 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details IRFSL4410ZPBF Infineon Technologies

Description: MOSFET N-CH 100V 97A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 97A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: TO-262, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50.

Weitere Produktangebote IRFSL4410ZPBF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRFSL4410ZPBF IRFSL4410ZPBF Hersteller : Infineon Technologies infineon-irfs4410z-datasheet-v01_01-en.pdf Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 681 Stücke:
Lieferzeit 14-21 Tag (e)
IRFSL4410ZPBF IRFSL4410ZPBF Hersteller : INFINEON TECHNOLOGIES irfb4410zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Technology: HEXFET®
Mounting: THT
Case: TO262
Kind of package: tube
Power dissipation: 230W
Drain-source voltage: 100V
Drain current: 97A
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFSL4410ZPBF IRFSL4410ZPBF Hersteller : Infineon Technologies irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a Description: MOSFET N-CH 100V 97A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-262
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Produkt ist nicht verfügbar
IRFSL4410ZPBF IRFSL4410ZPBF Hersteller : INFINEON TECHNOLOGIES irfb4410zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Technology: HEXFET®
Mounting: THT
Case: TO262
Kind of package: tube
Power dissipation: 230W
Drain-source voltage: 100V
Drain current: 97A
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar