IRFSL4410ZPBF Infineon Technologies
auf Bestellung 1389 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.61 EUR |
10+ | 3.87 EUR |
25+ | 3.66 EUR |
100+ | 3.15 EUR |
250+ | 2.96 EUR |
500+ | 2.8 EUR |
1000+ | 2.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFSL4410ZPBF Infineon Technologies
Description: MOSFET N-CH 100V 97A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 97A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: TO-262, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50.
Weitere Produktangebote IRFSL4410ZPBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IRFSL4410ZPBF | Hersteller : Infineon Technologies | Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 681 Stücke: Lieferzeit 14-21 Tag (e) |
||
IRFSL4410ZPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262 Technology: HEXFET® Mounting: THT Case: TO262 Kind of package: tube Power dissipation: 230W Drain-source voltage: 100V Drain current: 97A Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
IRFSL4410ZPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 97A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-262 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
Produkt ist nicht verfügbar |
||
IRFSL4410ZPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262 Technology: HEXFET® Mounting: THT Case: TO262 Kind of package: tube Power dissipation: 230W Drain-source voltage: 100V Drain current: 97A Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |