IRFSL4127PBF Infineon Technologies
auf Bestellung 262 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 8.8 EUR |
| 10+ | 7.39 EUR |
| 25+ | 6.97 EUR |
| 100+ | 5.97 EUR |
| 250+ | 5.65 EUR |
| 500+ | 5.32 EUR |
| 1000+ | 4.56 EUR |
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Technische Details IRFSL4127PBF Infineon Technologies
Description: MOSFET N-CH 200V 72A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-262, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V.
Weitere Produktangebote IRFSL4127PBF nach Preis ab 4.94 EUR bis 9.56 EUR
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IRFSL4127PBF | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 200V 72A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-262 Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V |
auf Bestellung 1706 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFSL4127PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 72A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 810 Stücke: Lieferzeit 14-21 Tag (e) |