Technische Details IRFSL38N20DPBF Infineon / IR
Description: MOSFET N-CH 200V 43A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V, Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-262, Part Status: Obsolete, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V.
Weitere Produktangebote IRFSL38N20DPBF
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IRFSL38N20DPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 200V 43A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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IRFSL38N20DPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 43A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V |
Produkt ist nicht verfügbar |