IRFSL3306PBF Infineon Technologies
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details IRFSL3306PBF Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V.
Weitere Produktangebote IRFSL3306PBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRFSL3306PBF | Hersteller : IR | 1014+ TO262 |
auf Bestellung 600 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFSL3306PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V |
Produkt ist nicht verfügbar |
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IRFSL3306PBF | Hersteller : Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC |
Produkt ist nicht verfügbar |