IRFSL3206PBF Infineon Technologies
auf Bestellung 2000 Stücke:
Lieferzeit 94-98 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.56 EUR |
| 10+ | 3.59 EUR |
| 100+ | 2.52 EUR |
| 500+ | 2.22 EUR |
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Technische Details IRFSL3206PBF Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V.
Weitere Produktangebote IRFSL3206PBF nach Preis ab 2.08 EUR bis 5.95 EUR
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IRFSL3206PBF | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 60V 120A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFSL3206PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL3206PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 210A Power dissipation: 300W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFSL3206PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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IRFSL3206PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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IRFSL3206PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 210A Power dissipation: 300W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |