IRFS3307ZTRRPBF Infineon Technologies
auf Bestellung 9600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 1.47 EUR |
| 1600+ | 1.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFS3307ZTRRPBF Infineon Technologies
Description: MOSFET N-CH 75V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V.
Weitere Produktangebote IRFS3307ZTRRPBF nach Preis ab 1.41 EUR bis 5.26 EUR
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IRFS3307ZTRRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 9600 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS3307ZTRRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 47200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS3307ZTRRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 33600 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS3307ZTRRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 36800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS3307ZTRRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 75V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V |
auf Bestellung 743 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS3307ZTRRPBF | Hersteller : Infineon Technologies |
MOSFETs 75V 1 N-CH HEXFET 5.8mOhms 79nC |
auf Bestellung 773 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS3307ZTRRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 75V 120A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 9600 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS3307ZTRRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRFS3307ZTRRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRFS3307ZTRRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 75V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V |
Produkt ist nicht verfügbar |