auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 188+ | 0.82 EUR |
| 196+ | 0.76 EUR |
| 206+ | 0.7 EUR |
| 250+ | 0.66 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.56 EUR |
| 3000+ | 0.52 EUR |
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Technische Details IRFR9120PBF-BE3 Vishay
Description: P-CHANNEL 100V, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V.
Weitere Produktangebote IRFR9120PBF-BE3 nach Preis ab 0.52 EUR bis 2.78 EUR
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IRFR9120PBF-BE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 100V 5.6A 3-Pin(2+Tab) DPAK |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR9120PBF-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 100V Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR9120PBF-BE3 | Hersteller : Vishay Semiconductors |
MOSFET P-CHANNEL 100V |
auf Bestellung 8478 Stücke: Lieferzeit 10-14 Tag (e) |
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