IRFR9110TF

IRFR9110TF Fairchild Semiconductor


FAIRS32516-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: 100V P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
auf Bestellung 9469 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
952+0.53 EUR
Mindestbestellmenge: 952
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Technische Details IRFR9110TF Fairchild Semiconductor

Description: 100V P-CHANNEL MOSFET, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V.

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IRFR9110TF FAIRS32516-1.pdf?t.download=true&u=5oefqw
auf Bestellung 2022 Stücke:
Lieferzeit 21-28 Tag (e)
IRFR9110TF Hersteller : ONSEMI FAIRS32516-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - IRFR9110TF - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 9469 Stücke:
Lieferzeit 14-21 Tag (e)