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IRFR5410TRRPBF

IRFR5410TRRPBF Infineon Technologies


infineon-irfr5410-datasheet-v01_01-en.pdf Hersteller: Infineon Technologies
Trans MOSFET P-CH Si 100V 13A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.96 EUR
Mindestbestellmenge: 3000
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Technische Details IRFR5410TRRPBF Infineon Technologies

Description: MOSFET P-CH 100V 13A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V, Power Dissipation (Max): 66W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V.

Weitere Produktangebote IRFR5410TRRPBF nach Preis ab 0.96 EUR bis 2.46 EUR

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IRFR5410TRRPBF IRFR5410TRRPBF Hersteller : Infineon Technologies infineon-irfr5410-datasheet-v01_01-en.pdf Trans MOSFET P-CH Si 100V 13A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.96 EUR
Mindestbestellmenge: 3000
IRFR5410TRRPBF IRFR5410TRRPBF Hersteller : Infineon Technologies Infineon_IRFR5410_DataSheet_v01_01_EN-3363345.pdf MOSFETs 1 P-CH -100V HEXFET 26mOhms 70nC
auf Bestellung 5323 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.46 EUR
10+ 2.02 EUR
100+ 1.62 EUR
250+ 1.49 EUR
500+ 1.35 EUR
1000+ 1.16 EUR
3000+ 1.07 EUR
Mindestbestellmenge: 2
IRFR5410TRRPBF IRFR5410TRRPBF Hersteller : Infineon Technologies infineon-irfr5410-datasheet-v01_01-en.pdf Trans MOSFET P-CH Si 100V 13A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
IRFR5410TRRPBF Hersteller : ROCHESTER ELECTRONICS IRSDS10174-1.pdf?t.download=true&u=5oefqw Description: ROCHESTER ELECTRONICS - IRFR5410TRRPBF - IRFR5410 - HEXFET POWER MOSFET
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
IRFR5410TRRPBF IRFR5410TRRPBF Hersteller : Infineon Technologies infineon-irfr5410-datasheet-v01_01-en.pdf Trans MOSFET P-CH Si 100V 13A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IRFR5410TRRPBF IRFR5410TRRPBF Hersteller : INFINEON TECHNOLOGIES irfr5410pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
IRFR5410TRRPBF IRFR5410TRRPBF Hersteller : Infineon Technologies irfr5410pbf.pdf?fileId=5546d462533600a4015356356f622107 Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Produkt ist nicht verfügbar
IRFR5410TRRPBF IRFR5410TRRPBF Hersteller : Infineon Technologies irfr5410pbf.pdf?fileId=5546d462533600a4015356356f622107 Description: MOSFET P-CH 100V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Produkt ist nicht verfügbar
IRFR5410TRRPBF IRFR5410TRRPBF Hersteller : INFINEON TECHNOLOGIES irfr5410pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar