auf Bestellung 3918 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 100+ | 1.56 EUR |
| 104+ | 1.43 EUR |
| 250+ | 1.32 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.14 EUR |
| 2500+ | 1.06 EUR |
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Technische Details IRFR420TRPBF-BE3 Vishay
Description: MOSFET N-CH 500V 2.4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V.
Weitere Produktangebote IRFR420TRPBF-BE3 nach Preis ab 0.72 EUR bis 2.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFR420TRPBF-BE3 | Hersteller : Vishay / Siliconix |
 MOSFETs 500V N-CH MOSFET |
auf Bestellung 29768 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR420TRPBF-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 2.4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR420TRPBF-BE3 | Hersteller : VISHAY |
Description: VISHAY - IRFR420TRPBF-BE3 - MOSFET, N-CH, 500V, 2.4A, TO-252 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 0 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: 0 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 0 Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: IRFR420 Series productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0 directShipCharge: 25 SVHC: Lead |
auf Bestellung 3918 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR420TRPBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 500V 2.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRFR420TRPBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 500V 2.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRFR420TRPBF-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 2.4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
Produkt ist nicht verfügbar |