IRFR4104TRLPBF Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH Si 40V 119A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.19 EUR |
| 6000+ | 1.09 EUR |
| 9000+ | 1.01 EUR |
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Technische Details IRFR4104TRLPBF Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V.
Weitere Produktangebote IRFR4104TRLPBF nach Preis ab 1.22 EUR bis 2.78 EUR
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IRFR4104TRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 119A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR4104TRLPBF | Hersteller : Infineon Technologies |
MOSFETs 40V 1 N-CH HEXFET 5.5mOhms 59nC |
auf Bestellung 2961 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR4104TRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 119A Automotive 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR4104TRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 119A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRFR4104TRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 42A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V |
Produkt ist nicht verfügbar |