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IRFR3411PBF Infineon Technologies
auf Bestellung 3073 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details IRFR3411PBF Infineon Technologies
Description: MOSFET N-CH 100V 32A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D-Pak, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V.
Weitere Produktangebote IRFR3411PBF nach Preis ab 8.74 EUR bis 10.56 EUR
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IRFR3411PBF | Hersteller : Infineon |
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auf Bestellung 69 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR3411PBF | Hersteller : International Rectifier Corporation |
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auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR3411PBF Produktcode: 131087 |
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IRFR3411PBF | Hersteller : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D-Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V |
Produkt ist nicht verfügbar |