Technische Details IRFR3303TR IOR
Description: MOSFET N-CH 30V 33A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D-Pak, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V.
Weitere Produktangebote IRFR3303TR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRFR3303TR | Hersteller : IR |
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auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFR3303TR | Hersteller : IR |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFR3303TR | Hersteller : IR |
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auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFR3303TR | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V |
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