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IRFR320TRRPBF Vishay Semiconductors
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.62 EUR |
10+ | 2.16 EUR |
100+ | 1.69 EUR |
500+ | 1.42 EUR |
1000+ | 1.15 EUR |
3000+ | 1.12 EUR |
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Technische Details IRFR320TRRPBF Vishay Semiconductors
Description: MOSFET N-CH 400V 3.1A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Weitere Produktangebote IRFR320TRRPBF
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IRFR320TRRPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRFR320TRRPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRFR320TRRPBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 3.1A; Idm: 12A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.1A Pulsed drain current: 12A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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IRFR320TRRPBF | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFR320TRRPBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 3.1A; Idm: 12A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.1A Pulsed drain current: 12A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |