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IRFR120NTRRPBF


irfr120npbf.pdf?fileId=5546d462533600a40153562d2620204d Hersteller: IR
Транз. Пол. БМ N-HEXFET D-PAK Udss=100V; Id=9,4A; Pdmax=48W; Rds=0,21 Ohm
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Technische Details IRFR120NTRRPBF IR

Description: MOSFET N-CH 100V 9.4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 5.6A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V.

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IRFR120NTRRPBF Hersteller : IR irfr120npbf.pdf?fileId=5546d462533600a40153562d2620204d DPAK 0831+
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Lieferzeit 21-28 Tag (e)
IRFR120NTRRPBF IRFR120NTRRPBF Hersteller : Infineon Technologies irfr120npbf.pdf Trans MOSFET N-CH 100V 9.4A 3-Pin(2+Tab) DPAK T/R
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IRFR120NTRRPBF IRFR120NTRRPBF Hersteller : Infineon Technologies irfr120npbf.pdf?fileId=5546d462533600a40153562d2620204d Description: MOSFET N-CH 100V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5.6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Produkt ist nicht verfügbar