IRFP7718PBF INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 355A; 517W; TO247AC
Mounting: THT
Case: TO247AC
Kind of package: tube
Power dissipation: 517W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 75V
Drain current: 355A
On-state resistance: 1.45mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 355A; 517W; TO247AC
Mounting: THT
Case: TO247AC
Kind of package: tube
Power dissipation: 517W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 75V
Drain current: 355A
On-state resistance: 1.45mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 335 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
9+ | 8.55 EUR |
13+ | 5.58 EUR |
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Produktbewertung abgeben
Technische Details IRFP7718PBF INFINEON TECHNOLOGIES
Description: MOSFET N-CH 75V 195A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V, Power Dissipation (Max): 517W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 830 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 29550 pF @ 25 V.
Weitere Produktangebote IRFP7718PBF nach Preis ab 5 EUR bis 11.35 EUR
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IRFP7718PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 355A; 517W; TO247AC Mounting: THT Case: TO247AC Kind of package: tube Power dissipation: 517W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 75V Drain current: 355A On-state resistance: 1.45mΩ Type of transistor: N-MOSFET |
auf Bestellung 335 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP7718PBF | Hersteller : Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP7718PBF | Hersteller : Infineon Technologies | Trans MOSFET N-CH Si 75V 355A 3-Pin(3+Tab) TO-247AC Tube |
auf Bestellung 509 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP7718PBF | Hersteller : Infineon Technologies | Trans MOSFET N-CH Si 75V 355A 3-Pin(3+Tab) TO-247AC Tube |
Produkt ist nicht verfügbar |
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IRFP7718PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 75V 195A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 830 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 29550 pF @ 25 V |
Produkt ist nicht verfügbar |