IRFP4710PBF Infineon Technologies
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 8.11 EUR |
| 25+ | 7.06 EUR |
| 1000+ | 4.08 EUR |
| 2500+ | 4.01 EUR |
| 5000+ | 3.96 EUR |
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Technische Details IRFP4710PBF Infineon Technologies
Description: MOSFET N-CH 100V 72A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 45A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6160 pF @ 25 V.
Weitere Produktangebote IRFP4710PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRFP4710PBF | Hersteller : ROCHESTER ELECTRONICS |
 Description: ROCHESTER ELECTRONICS - IRFP4710PBF - IRFP4710 12V-300V N-CHANNEL POWER MOSFETtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 1350 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP4710PBF Produktcode: 83493 |
Transistoren > MOSFET N-CH |
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IRFP4710PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 72A 3-Pin(3+Tab) TO-247AC Tube |
Produkt ist nicht verfügbar |
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IRFP4710PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 72A; 190W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 72A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFP4710PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 72A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 45A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6160 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFP4710PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 72A; 190W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 72A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |