Technische Details IRFP3703 IR
Description: MOSFET N-CH 30V 210A TO247AC, Packaging: Bag, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 210A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 76A, 10V, Power Dissipation (Max): 3.8W (Ta), 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IRFP3703
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IRFP3703 | Hersteller : IR |
 09+ |
auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
IRFP3703 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 210A TO247AC Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 76A, 10V Power Dissipation (Max): 3.8W (Ta), 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |