Technische Details IRFP31N50L IR
Description: MOSFET N-CH 500V 31A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 19A, 10V, Power Dissipation (Max): 460W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IRFP31N50L
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRFP31N50L | Hersteller : IR | 03+ TO-247 |
auf Bestellung 360 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFP31N50L | Hersteller : IR | TO-3PL |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFP31N50L | Hersteller : Vishay | Trans MOSFET N-CH 500V 31A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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IRFP31N50L | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 31A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 19A, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |