Technische Details IRFP22N60K IR
Description: MOSFET N-CH 600V 22A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 13A, 10V, Power Dissipation (Max): 370W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 25 V.
Analogon IRFP22N60K IR
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IRFP22N60KPBF Produktcode: 35348 |
Hersteller : IR |
![]() Gehäuse: TO-247 Uds,V: 600 Idd,A: 22 Rds(on), Ohm: 0.24 Ciss, pF/Qg, nC: 3570/150 JHGF: THT |
verfügbar: 5 Stück
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Weitere Produktangebote IRFP22N60K
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IRFP22N60K Produktcode: 149454 |
Hersteller : Vishay |
![]() Uds,V: 600 V Idd,A: 22 A Rds(on), Ohm: 0,24 Ohm Ciss, pF/Qg, nC: 3570/150 JHGF: THT |
Produkt ist nicht verfügbar
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IRFP22N60K | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 22A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 13A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFP22N60K | Hersteller : Vishay / Siliconix | MOSFETs RECOMMENDED ALT IRFP22N60KPBF |
Produkt ist nicht verfügbar |