
IRFP048RPBF VISHAY

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 110nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 469 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
28+ | 2.65 EUR |
33+ | 2.23 EUR |
46+ | 1.59 EUR |
48+ | 1.50 EUR |
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Technische Details IRFP048RPBF VISHAY
Description: MOSFET N-CH 60V 70A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 44A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V.
Weitere Produktangebote IRFP048RPBF nach Preis ab 1.50 EUR bis 2.65 EUR
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IRFP048RPBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 70A Pulsed drain current: 290A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of channel: enhancement Gate charge: 110nC Kind of package: tube |
auf Bestellung 469 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP048RPBF | Hersteller : IR |
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auf Bestellung 375 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFP048RPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRFP048RPBF | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 44A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFP048RPBF | Hersteller : Vishay Semiconductors |
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Produkt ist nicht verfügbar |