IRFIZ34NPBF Infineon Technologies
auf Bestellung 3012 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 156+ | 0.97 EUR |
| 160+ | 0.92 EUR |
| 163+ | 0.86 EUR |
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Technische Details IRFIZ34NPBF Infineon Technologies
Description: MOSFET N-CH 55V 21A TO220AB FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 11A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB Full-Pak, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V.
Weitere Produktangebote IRFIZ34NPBF nach Preis ab 0.99 EUR bis 2.06 EUR
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IRFIZ34NPBF | Hersteller : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 19A; 31W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 19A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 22.7nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 347 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFIZ34NPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 19A; 31W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 19A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 22.7nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 347 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFIZ34NPBF | Hersteller : Infineon Technologies |
MOSFET MOSFT 55V 19A 40mOhm 22.7nC |
auf Bestellung 1981 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFIZ34NPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 21A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFIZ34NPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 21A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFIZ34NPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRFIZ34NPBF - IRFIZ34 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 1587 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFIZ34NPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 21A TO220AB FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 11A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Full-Pak Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
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