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IRFIBF30GPBF Vishay Siliconix
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Description: MOSFET N-CH 900V 1.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 1.1A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.65 EUR |
50+ | 4.48 EUR |
100+ | 3.84 EUR |
500+ | 3.41 EUR |
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Technische Details IRFIBF30GPBF Vishay Siliconix
Description: MOSFET N-CH 900V 1.9A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 3.7Ohm @ 1.1A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.
Weitere Produktangebote IRFIBF30GPBF nach Preis ab 2.87 EUR bis 5.7 EUR
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IRFIBF30GPBF | Hersteller : Vishay Semiconductors |
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auf Bestellung 1481 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFIBF30GPBF | Hersteller : Vishay |
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IRFIBF30GPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRFIBF30GPBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.2A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.2A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.7Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFIBF30GPBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.2A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.2A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.7Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |