auf Bestellung 8402 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.66 EUR |
10+ | 2.96 EUR |
100+ | 2.45 EUR |
250+ | 2.32 EUR |
500+ | 2.04 EUR |
1000+ | 1.78 EUR |
2000+ | 1.76 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFI634GPBF Vishay Semiconductors
Description: MOSFET N-CH 250V 5.6A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V.
Weitere Produktangebote IRFI634GPBF nach Preis ab 2.07 EUR bis 3.7 EUR
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IRFI634GPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 250V 5.6A TO220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V |
auf Bestellung 854 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFI634GPBF | Hersteller : Vishay | Trans MOSFET N-CH 250V 5.6A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
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IRFI634GPBF | Hersteller : Vishay | Trans MOSFET N-CH 250V 5.6A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
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IRFI634GPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 22A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5.6A Pulsed drain current: 22A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFI634GPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 22A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5.6A Pulsed drain current: 22A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |