IRFI630GPBF VISHAY
Hersteller: VISHAYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.7A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1010 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 1.14 EUR |
| 95+ | 0.76 EUR |
| 100+ | 0.72 EUR |
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Technische Details IRFI630GPBF VISHAY
Description: MOSFET N-CH 200V 5.9A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V.
Weitere Produktangebote IRFI630GPBF nach Preis ab 0.72 EUR bis 4.21 EUR
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IRFI630GPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.7A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.7A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 1010 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI630GPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 5.9A 3-Pin(3+Tab) TO-220FP |
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IRFI630GPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 5.9A 3-Pin(3+Tab) TO-220FP |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI630GPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 5.9A TO220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
auf Bestellung 1630 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFI630GPBF | Hersteller : Vishay Semiconductors |
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IRFI630GPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 5.9A 3-Pin(3+Tab) TO-220FP |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI630GPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 5.9A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |