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IRFHM8334TRPBF Infineon Technologies
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Technische Details IRFHM8334TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 13A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Power Dissipation (Max): 2.7W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: 8-PQFN (3.3x3.3), Power33, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFHM8334TRPBF | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V |
Produkt ist nicht verfügbar |
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IRFHM8334TRPBF | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V |
Produkt ist nicht verfügbar |