IRFH8316TRPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 27A/50A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V
Description: MOSFET N-CH 30V 27A/50A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
866+ | 0.57 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFH8316TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 27A/50A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V, Power Dissipation (Max): 3.6W (Ta), 59W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 50µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V.
Weitere Produktangebote IRFH8316TRPBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IRFH8316TRPBF | Hersteller : Infineon / IR | MOSFET MOSFET, 30V, 25A, 4 4.7nC Qg, PQFN5x6 |
auf Bestellung 2287 Stücke: Lieferzeit 10-14 Tag (e) |
||
IRFH8316TRPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRFH8316TRPBF - IRFH8316 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2958 Stücke: Lieferzeit 14-21 Tag (e) |
||
IRFH8316TRPBF | Hersteller : Infineon Technologies | Trans MOSFET N-CH 30V 27A 8-Pin QFN EP T/R |
Produkt ist nicht verfügbar |
||
IRFH8316TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 27A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
IRFH8316TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 27A/50A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 50µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V |
Produkt ist nicht verfügbar |
||
IRFH8316TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 27A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |