Technische Details IRFH7911TRPBF Infineon / IR
Description: MOSFET 2N-CH 30V 13A/28A PQFN, Packaging: Tape & Reel (TR), Package / Case: 18-PowerVQFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W, 3.4W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13A, 28A, Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: PQFN (5x6).
Weitere Produktangebote IRFH7911TRPBF
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auf Bestellung 680 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFH7911TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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IRFH7911TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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IRFH7911TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 30V 13A/28A PQFN Packaging: Tape & Reel (TR) Package / Case: 18-PowerVQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W, 3.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 28A Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: PQFN (5x6) |
Produkt ist nicht verfügbar |