IRFH7085TRPBF Infineon Technologies
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 1.1 EUR |
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Technische Details IRFH7085TRPBF Infineon Technologies
Description: MOSFET N-CH 60V 100A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 150µA, Supplier Device Package: PQFN (5x6), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V.
Weitere Produktangebote IRFH7085TRPBF nach Preis ab 1.1 EUR bis 5.58 EUR
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IRFH7085TRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 60V 23A 8-Pin PQFN EP T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH7085TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 100A PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 150µA Supplier Device Package: PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH7085TRPBF | Hersteller : Infineon Technologies |
MOSFETs 60V StrongIRFET Power Mosfet |
auf Bestellung 1742 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH7085TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 100A PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 150µA Supplier Device Package: PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V |
auf Bestellung 5803 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH7085TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 23A 8-Pin PQFN EP T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH7085TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 23A 8-Pin PQFN EP T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFH7085TRPBF | Hersteller : Infineon |
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auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFH7085TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 23A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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IRFH7085TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 23A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |